세종대학교 두드림 비교과통합관리시스템

특강주제 : DRAM Capacitor 유전막 – Atomic Layer Depostion of SrTiO3

특강일시/장소 : 2021. 03. 09 (화요일), 14:00 ~ 18:00 / 블랙보드를 통한 온라인 강의 진행

특강강사 : 이웅규 교수님 (명지대학교)

특강목적 및 기대효과 : ZrO2/Al2O3/ZrO2 layers have been commercially employed for a long time as the dielectric materials of dynamic random access memory (DRAM) capacitors. However, the scaling limit of capacitors due to the insufficiently high permittivity of ZrO2 required novel materials. SrTiO3 (STO) has been considered as a promising candidate for the dielectric materials in next-generation DRAM capacitor applications due to the high dielectric constant (~150 in the thin-film state) and acceptable energy bandgap (~3.2 eV). In addition to the employment of SrTiO3 dielectrics, an extreme three-dimensional structure (aspect ratio ~100:1) should be adopted to achieve a high enough capacitance for normal DRAM operation. Therefore, atomic layer deposition (ALD) should be employed for the utilization of its merit, exceptional conformality by the
self-limited surface reaction.